2N5810 Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 25 V
• Collector-Base Voltage, max: 35 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 0.75 A
• Collector Dissipation: 0.625 W
• DC Current Gain (h_fe): 60 to 200
• Transition Frequency, min: 100 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-92

The 2N5810 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the 2N5810 is the 2N5811.You can replace the 2N5810 with the BC485.