2N5759 Bipolar Transistor

Characteristics of 2N5759 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 20 to 80
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5759

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N5759 transistor

You can replace the 2N5759 with the 2N5038, 2N5038G, 2N5039, 2N5630, 2N5633, 2N5672, BUY69C or BUY70C.
If you find an error please send an email to mail@el-component.com