2N5551C Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 160 V
• Collector-Base Voltage, max: 180 V
• Emitter-Base Voltage, max: 6 V
• Collector Current − Continuous, max: 0.6 A
• Collector Dissipation: 0.625 W
• DC Current Gain (h_fe): 80 to 250
• Transition Frequency, min: 100 MHz
• Noise Figure, max: 8 dB
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-92

The 2N5551C is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Suffix "C" means center collector in 2N5551.
Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the 2N5551C is the 2N5401C.The 2N5551S (SOT-23), DXT5551 (SOT-89), DZT5551 (SOT-223), KST43 (SOT-23), KST5551 (SOT-23), MMBT5551 (SOT-23) and PMBT5551 (SOT-23) is the SMD version of the 2N5551C transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the 2N5551C with the 2SC2383, 2SC3228, KSC2383 or KTC3228.