2N5451 Bipolar Transistor
Characteristics of 2N5451 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 20 V
- Collector-Base Voltage, max: 40 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.8 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 30 to 600
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
Pinout of 2N5451
Here is an image showing the pin diagram of this transistor.
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