2N5339 Bipolar Transistor

Characteristics of 2N5339 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 6 W
  • DC Current Gain (hfe): 60 to 240
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-39

Pinout of 2N5339

Here is an image showing the pin diagram of this transistor.

SMD Version of 2N5339 transistor

The BDP953 (SOT-223) is the SMD version of the 2N5339 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
If you find an error please send an email to mail@el-component.com