2N5089 Bipolar Transistor

Characteristics of 2N5089 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 3 V
  • Collector Current − Continuous, max: 0.05 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 400 to 1200
  • Transition Frequency, min: 50 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92
  • These Devices are Pb-Free and are RoHS Compliant

Pinout of 2N5089

The 2N5089 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

SMD Version of 2N5089 transistor

The MMBT5089 (SOT-23) and MMBTH10 (SOT-23) is the SMD version of the 2N5089 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2N5089 transistor

You can replace the 2N5089 with the MPS650, MPS650G, MPS6532, MPS6601, MPS6601G, MPS6602, MPS6602G, MPSH10, MPSW01, MPSW01A, MPSW01AG, MPSW01G or ZTX690B.
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