2N5058 Bipolar Transistor
Characteristics of 2N5058 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 300 V
- Collector-Base Voltage, max: 300 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 0.15 A
- Collector Dissipation: 5 W
- DC Current Gain (hfe): 35 to 150
- Transition Frequency, min: 160 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-39
Pinout of 2N5058
SMD Version of 2N5058 transistor
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