2N4298 Bipolar Transistor
Characteristics of 2N4298 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 350 V
- Collector-Base Voltage, max: 500 V
- Emitter-Base Voltage, max: 4 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 25 to 75
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -65 to +175 °C
- Package: TO-66
Pinout of 2N4298
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