2N3638 Bipolar Transistor

Characteristics of 2N3638 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -25 V
  • Emitter-Base Voltage, max: -4 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.7 W
  • DC Current Gain (hfe): 30
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-105

Pinout of 2N3638

Here is an image showing the pin diagram of this transistor.

SMD Version of 2N3638 transistor

The BC808 (SOT-23), BC808-16 (SOT-23), BC808-16W (SOT-323), BC808-25 (SOT-23), BC808-25W (SOT-323), BC808-40 (SOT-23), BC808-40W (SOT-323), BC808W (SOT-323), MMBTA63 (SOT-23), MMBTA64 (SOT-23), MMBTA65 (SOT-23), PMBTA64 (SOT-23), PZTA63 (SOT-223), PZTA64 (SOT-223) and PZTA65 (SOT-223) is the SMD version of the 2N3638 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2N3638 transistor

You can replace the 2N3638 with the 2N3638A or 2N3644.
If you find an error please send an email to mail@el-component.com