2N3636 Bipolar Transistor

Characteristics of 2N3636 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -175 V
  • Collector-Base Voltage, max: -175 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 5 W
  • DC Current Gain (hfe): 50 to 150
  • Noise Figure, max: 5 dB
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-39

Pinout of 2N3636

Here is an image showing the pin diagram of this transistor.

SMD Version of 2N3636 transistor

The KST93 (SOT-23) is the SMD version of the 2N3636 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2N3636 transistor

You can replace the 2N3636 with the 2N5415.
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