2N3569 Bipolar Transistor
Characteristics of 2N3569 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 40 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 100 to 300
- Transition Frequency, min: 600 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-105
Pinout of 2N3569
2N3569 Transistor in TO-92 Package
If you find an error please send an email to mail@el-component.com