2N3567 Bipolar Transistor
Characteristics of 2N3567 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 40 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 40 to 120
- Transition Frequency, min: 600 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-105
Pinout of 2N3567
2N3567 Transistor in TO-92 Package
Replacement and Equivalent for 2N3567 transistor
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