2N3501 Bipolar Transistor

Characteristics of 2N3501 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.3 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 100 to 300
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-39

Pinout of 2N3501

Here is an image showing the pin diagram of this transistor.
If you find an error please send an email to mail@el-component.com