2N3501 Bipolar Transistor
Characteristics of 2N3501 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 150 V
- Collector-Base Voltage, max: 150 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.3 A
- Collector Dissipation: 1 W
- DC Current Gain (hfe): 100 to 300
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-39
Pinout of 2N3501
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