2DA1213O Bipolar Transistor
Characteristics of 2DA1213O Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -50 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 1 W
- DC Current Gain (hfe): 70 to 140
- Transition Frequency, min: 160 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-89
- Electrically Similar to the Popular 2SA1213-O transistor
Pinout of 2DA1213O
Classification of hFE
Replacement and Equivalent for 2DA1213O transistor
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